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HMC909LP4E - RMS POWER DETECTOR SINGLE-ENDED, DC - 5.8 GHz

HMC909LP4E_4545227.PDF Datasheet


 Full text search : RMS POWER DETECTOR SINGLE-ENDED, DC - 5.8 GHz


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PART Description Maker
HMC714LP5 HMC714LP5E DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz
Hittite Microwave Corporation
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Voltage Detector (2.6V)
Voltage Detector (2.5V)
Voltage Detector (2.7V)
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
PT110 PT006 PT210 PT225 PT125 PT215 PT610 PT106-66 30V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL8113S with Standard Packaging
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7205 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3305 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4321PBF with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1405ZS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7473 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF540ZS with Lead Free Packaging
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z24N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU8203 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ34NS with Standard Packaging
TRIAC|600V V(DRM)|6A I(T)RMS|TO-66
TRIAC|50V V(DRM)|25A I(T)RMS|TO-208VAR1/2
TRIAC|100V V(DRM)|2.5A I(T)RMS|TO-5
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208VAR1/2
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6644 qualified for use
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6644 with Standard Tape and Reel
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS4610 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7811W with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL520NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR120N with Lead Free Packaging
TRIAC|50V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|100V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|600V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|50V V(DRM)|3A I(T)RMS|TO-208VAR1/2
TRIAC|50V V(DRM)|3A I(T)RMS|PRESS-13
TRIAC|100V V(DRM)|3A I(T)RMS|TO-208VAR1/2
AC Relay; Output Device:MOSFET; Output Voltage Max:60VAC; Load Current Max:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Switch Function:SPST-NO RoHS Compliant: Yes
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7490 with Lead Free Packaging 可控硅| 200伏五(DRM)的| 6A条口(T)的有效值|VAR
Microelectronic Power IC HEXFET® Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V AC, 1.0A 可控硅| 400V五(DRM)的| 6A条口(T)的有效值|208VAR1 / 2
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4710 with Standard Packaging
100V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Package
Microsemi, Corp.
LG, Corp.
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Ultra-low-power voltage detector, 4.1V
Ultra-low-power voltage detector, 3.9V
Ultra-low-power voltage detector, 3.6V
Ultra-low-power voltage detector, 3.7V
Ultra-low-power voltage detector, 2.2V
Ultra-low-power voltage detector, 3.0V
Ultra-low-power voltage detector, 4.6V
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Maxim Integrated Produc...
MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
MAXIM - Dallas Semiconductor
604B 1002A 1502A 602BI 1502BI TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
Rochester Electronics, LLC
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HSMS-2824 · RF mixer/detector diode
HSMS-2820 · RF mixer/detector diode
HSMS-282L · RF mixer/detector diode
Agilent(Hewlett-Packard...
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五(DRM)的| 8A条口(T)的有效值| TO - 220AB现有
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五(DRM)的| 8A条口T)的有效值| TO - 220AB现有
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五(DRM)的| 4A条口(T)的有效值| TO - 220AB现有
Teridian Semiconductor, Corp.
Littelfuse, Inc.
DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 10A条口(T)的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
Won-Top Electronics Co., Ltd.
ON Semiconductor
AD637 AD637JD 500V; 108mW; high precision, wideband true RMS-to-DC converter
High Precision,wide-RMS-to-DC Converter
Complete High Accuracy Monolithic RMS-to-DC Converter.
Analog Devices
AD824AR AD824ACHIPS AD824AN AD824AR-14 AD824AN-3V Single Supply, Rail-to-Rail Low Power, FET-Input Op Amp
Single Supply/ Rail-to-Rail Low Power/ FET-Input Op Amp
VARISTOR 14V RMS 14MM RADIAL QUAD OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO14
Analog Devices, Inc.
SSG50C120 SSG50C60 SSG50C100 SSG50C40 TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8

 
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